The silicon carbide (SiC) material project, funded with a 3 billion yuan ($431.6 million) investment by SICC Co, started construction in Liuyang Hi-tech Industrial Development Zone on Nov 13.

It is the largest third generation semiconductor SiC material project and complete process production line in China. SiC is a national strategic emerging industry and SICC is the world's fourth enterprise to mass produce SiC substrates.

SICC's technology has reached the international advanced level and individual products, which are classified as national strategic goods, can only be mass produced by this company and one other American enterprise.

The company's main products are widely used in various technical fields, including power transmission, aerospace, new energy vehicles, semiconductor lighting, and 5G communications. It is one of the basic materials for 5G communication and the internet of things.

Zong Yanmin, chairman of SICC, said that landing in Changsha meets the needs of the company's development as there is a market demand there. He hopes that the company can promote the ecological construction of the SiC industry, contribute to the development of the semiconductor industry, and build Changsha into a national intelligent manufacturing center.

It is expected that the company will become one of the top two in the world by 2020, and be the world's number one in the industry within 5 to 10 years.